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| PD 91453B IRG4BC30UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode * Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 * IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations * Industry standard TO-220AB package C UltraFast CoPack IGBT VCES = 600V G E VCE(on) typ. = 1.95V @VGE = 15V, IC = 12A n-cha nn el Benefits * Generation -4 IGBT's offer highest efficiencies available * IGBTs optimized for specific application conditions * HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing * Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. 600 23 12 92 92 12 92 20 100 42 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1 N*m) Units V A V W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. ------------------------- Typ. ----------0.50 ----2 (0.07) Max. 1.2 2.5 -----80 ------ Units C/W g (oz) www.irf.com 1 4/17/00 IRG4BC30UD Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Min. Collector-to-Emitter Breakdown VoltageS 600 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage ---VCE(on) Collector-to-Emitter Saturation Voltage ---------VGE(th) Gate Threshold Voltage 3.0 VGE(th)/TJ Temperature Coeff. of Threshold Voltage ---gfe Forward Transconductance T 3.1 ICES Zero Gate Voltage Collector Current ------V FM Diode Forward Voltage Drop ------IGES Gate-to-Emitter Leakage Current ---V(BR)CES Typ. Max. Units ------V 0.63 ---- V/C 1.95 2.1 2.52 ---V 2.09 ------- 6.0 -11 ---- mV/C 8.6 ---S ---- 250 A ---- 2500 1.4 1.7 V 1.3 1.6 ---- 100 nA Conditions VGE = 0V, IC = 250A VGE = 0V, IC = 1.0mA IC = 12A VGE = 15V IC = 23A See Fig. 2, 5 IC = 12A, TJ = 150C VCE = VGE, IC = 250A VCE = VGE, IC = 250A VCE = 100V, IC = 12A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150C IC = 12A See Fig. 13 IC = 12A, TJ = 150C VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Irr Qrr di (rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. ---------------------------------------------------------------------------------Typ. 50 8.1 18 40 21 91 80 0.38 0.16 0.54 40 22 120 180 0.89 7.5 1100 73 14 42 80 3.5 5.6 80 220 180 120 Max. Units Conditions 75 IC = 12A 12 nC VCC = 400V See Fig. 8 27 VGE = 15V ---TJ = 25C ---ns IC = 12A, VCC = 480V 140 VGE = 15V, RG = 23 130 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 0.9 ---TJ = 150C, See Fig. 9, 10, 11, 18 ---ns IC = 12A, VCC = 480V ---VGE = 15V, RG = 23 ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 --- = 1.0MHz 60 ns TJ = 25C See Fig. 120 TJ = 125C 14 IF = 12A 6.0 A TJ = 25C See Fig. 10 TJ = 125C 15 VR = 200V 180 nC TJ = 25C See Fig. 600 TJ = 125C 16 di/dt 200A/s ---- A/s TJ = 25C See Fig. ---TJ = 125C 17 2 www.irf.com IRG4BC30UD 16 12 Load Current ( A ) D uty c yc le : 5 0% T J = 12 5 C T s in k = 90 C G a te d rive a s s pe c ified T urn -o n losse s in clud e effects of re verse re co very Pow e r D is sipatio n = 21 W 6 0 % o f ra te d vo l ta g e 8 I 4 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 I C , C olle cto r-to -E m itte r C u rre n t (A ) TJ = 2 5 C T J = 1 5 0 C 10 I C , C o lle cto r-to -E m itte r C u rre n t (A ) T J = 1 5 0 C 10 T J = 2 5 C 1 1 0.1 0.1 1 VG E = 1 5 V 2 0 s P U L S E W ID T H A 10 0.1 5 6 7 8 V CC = 10V 5 s P U L S E W ID T H 9 10 11 A 12 V C E , C o lle cto r-to -E m itte r V o lta g e (V ) VG E , G a te -to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC30UD M a xim u m D C C o lle c to r C u rre n t (A 25 V C E , C ollector-to-Em itter Volta ge (V) V GE = 15V 3.0 VGE = 15V 8 0 s P U L S E W ID T H IC = 2 4 A 20 2.5 15 IC = 1 2 A 2.0 10 5 I C = 6 .0 A A -60 -40 -20 0 20 40 60 80 100 120 140 160 0 25 50 75 100 125 A 150 1.5 TC , C a s e Te m p e ra tu re (C ) T J , Ju n c tio n T e m p e ra tu re (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Therm al Response (Z thJ C ) 1 D = 0.5 0 0.20 0.10 PD M 0 .1 0 .05 0 .0 2 0 .0 1 S IN G L E PU LS E (T H E R M AL RE S PO N SE ) t 1 t2 N o te s : 1 . D u ty f ac t or D = t 1 /t 2 0 .0 1 0 .0 0 0 0 1 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R ectangular Pulse Duration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30UD 2000 V G E , G a te -to -E m itte r V o lta g e (V ) A C, C apa cita nc e (pF ) 1600 V GE = C ie s = C re s = C oes = 0V , f = 1MHz C g e + C g c , C ce S H O R TE D C gc C ce + C g c 20 VCE = 400V IC = 12A 16 C ie s 1200 12 800 C oes 8 400 C re s 4 0 1 10 0 0 10 20 30 40 A 50 100 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) Q g , T o ta l G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.60 10 Total Switchig Losses (mJ) 0.58 Total Switchig Losses (mJ) V C C = 480V V G E = 15V T J = 25C I C = 12A R G = 23 V G E = 15V V C C = 480V I C = 24A 0.56 1 I C = 12A 0.54 I C = 6.0A 0.52 0.50 0 10 20 30 40 50 A 60 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 A 160 R G , Gate Resistance ( ) TJ , Junction Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC30UD 2.0 Total Switchig Losses (mJ) 1.6 I C , C ollector-to-E m itter C urrent (A ) RG TJ V CC V GE = 23 = 150C = 480V = 15V 1000 VG E E 2 0V G= T J = 12 5 C 100 1.2 S A FE O P E R A TIN G A R E A 10 0.8 1 0.4 0.0 0 10 20 30 A 0 .1 1 10 100 1000 I C , Collector-to-Emitter Current (A ) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 100 Fig. 12 - Turn-Off SOA Instan tan eou s Fo rwa rd C urre nt - I F (A ) TJ = 15 0C 10 TJ = 12 5C TJ = 2 5C 1 0.4 0.8 1.2 1.6 2.0 2.4 Fo rwa rd V oltage D rop - V FM (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4BC30UD 160 100 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 120 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C I F = 24 A I F = 1 2A 80 I IR R M - (A ) I F = 2 4A 10 t rr - (ns) I F = 1 2A I F = 6 .0A I F = 6 .0 A 40 0 100 d i f /d t - (A / s) 1000 1 100 1000 di f /dt - (A /s) Fig. 14 - Typical Reverse Recovery vs. dif/dt 600 Fig. 15 - Typical Recovery Current vs. dif/dt 10000 VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C VR = 2 0 0 V T J = 1 2 5 C T J = 2 5 C 400 d i(re c )M /d t - (A / s) 1000 Q R R - (n C ) IF = 6.0 A I F = 2 4A I F = 1 2A I F = 12 A 100 200 I F = 6.0 A I F = 2 4A 0 100 d i f /d t - (A / s) 1000 10 100 1000 d i f /d t - (A / s) Fig. 16 - Typical Stored Charge vs. dif/dt Fig. 17 - Typical di(rec)M/dt vs. dif/dt www.irf.com 7 IRG4BC30UD 90% Vge +Vge Same ty pe device as D .U.T. Vce Ic 80% of Vce 430F D .U .T. 10% Vce Ic 9 0 % Ic 5 % Ic td (o ff) tf Eoff = t1 + 5 S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg trr Ic Q rr = trr id d t tx tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k Ic 1 0 % Irr V cc V pk Irr D IO D E R E C O V E R Y W A V E FO R M S td (o n ) tr 5% Vce t2 E o n = V ce ie d t t1 t2 D IO D E R E V E R S E REC OVERY ENER GY t3 t4 E re c = t1 t4 V d id d t t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr 8 www.irf.com IRG4BC30UD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V 50V 6000 F 100 V Vc* D.U.T. RL= 0 - 480V 480V 4 X IC @25C Figure 19. Clamped Inductive Load Test Circuit Figure 20. Pulsed Collector Current Test Circuit www.irf.com 9 IRG4BC30UD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10H, RG = 23 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot. Case Outline TO-220AB 1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 ) 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 3.78 (.149) 3.54 (.139) -A6.47 (.255 ) 6.10 (.240 ) 1.15 (.045) M IN -B - 4.69 (.185) 4.20 (.165) 1.32 (.052) 1.22 (.048) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 2 3 N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 2 0 A B . 3X 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 3.96 (.160) 3.55 (.140) LEAD 1234- A S S IG N M E N T S GA TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160 ) 3.55 (.140 ) 0.93 (.037) 0.69 (.027) MBAM 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) 2 .5 4 (.1 0 0) 2X 3X 3X 0.55 (.022) 0.46 (.018) 0 .3 6 (.01 4 ) 2.92 (.115) 2.64 (.104) CONFORMS TO JEDEC OUTLINE TO-220AB D im e ns io ns in M illim e ters a nd (In c he s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 10 www.irf.com |
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